PART |
Description |
Maker |
IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五(巴西)直| 9A条(丁) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五(巴西)国际消费电子展| 50A条一(c
|
IXYS, Corp.
|
FM2G75US60 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块|半桥| 600V的五(巴西)国际消费电子展| 75A条一(c Molding Type Module
|
Sharp, Corp. FAIRCHILD[Fairchild Semiconductor]
|
MG800J2YS50A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
7MBP10PE120 7MBR10PE120 |
IGBT module (S series) IGBT Module(Power Integrated Module)
|
FUJI[Fuji Electric]
|
FZ1200R12KL4C |
IGBT-Wechselrichter / IGBT-inverter IGBT Power Module
|
eupec GmbH
|
MIG100J7CSB1W |
MINIATURE POWER RELAY 东芝智能功率模块IGBT的硅频道 TOSHIBA Intelligent Power Module Silicon N Channel IGBT Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
F6-8R10KF |
TRANSISTOR | IGBT POWER MODULE | FULL BRIDGE | 1KV V(BR)CES | 8A I(C) 晶体管| IGBT功率模块|全桥| 1KV交五(巴西)国际消费电子展| 8A条一(c
|
ECM Electronics, Ltd.
|
FS8R12KF |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 1.2KV五(巴西)国际消费电子展| 8A条一(c
|
ECM Electronics, Ltd.
|
MP4015 |
Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching. TOSHIBA Power Transistor Module
|
TOSHIBA[Toshiba Semiconductor]
|
2MBI100J120 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五(巴西)国际消费电子展| 100号A一c
|
Samsung Semiconductor Co., Ltd.
|
IEF21KA1 |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 15A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 1KV交五(巴西)国际消费电子展|5A一(c
|
TE Connectivity, Ltd.
|